The distribution of resistance fluctuations of conducting thin films with granular structure near electrical breakdown is studied by numerical simulations. The film is modeled as a resistor network in a steady state determined by the competition between two biased processes, breaking and recovery. Systems of different sizes and with different levels of internal disorder are considered. Sharp deviations from a Gaussian distribution are found near breakdown and the effect increases with the degree of internal disorder. We show that in general this non-Gaussianity is related to the finite size of the system and vanishes in the large size limit. Nevertheless, near the critical point of the conductor-insulator transition, deviations from Gaussianity persist when the size is increased and the distribution of resistance fluctuations is well fitted by the universal Bramwell-Holdsworth-Pinton distribution. (C) 2004 Elsevier B.V. All rights reserved.

Non gaussian resistance noise near electrical breakdown in granular materials / Pennetta, C.; Alfinito, E.; Reggiani, L.; Ruffo, S.. - In: PHYSICA. A. - ISSN 0378-4371. - 340:1-3(2004), pp. 380-387. [10.1016/j.physa.2004.04.030]

Non gaussian resistance noise near electrical breakdown in granular materials

Ruffo, S.
2004-01-01

Abstract

The distribution of resistance fluctuations of conducting thin films with granular structure near electrical breakdown is studied by numerical simulations. The film is modeled as a resistor network in a steady state determined by the competition between two biased processes, breaking and recovery. Systems of different sizes and with different levels of internal disorder are considered. Sharp deviations from a Gaussian distribution are found near breakdown and the effect increases with the degree of internal disorder. We show that in general this non-Gaussianity is related to the finite size of the system and vanishes in the large size limit. Nevertheless, near the critical point of the conductor-insulator transition, deviations from Gaussianity persist when the size is increased and the distribution of resistance fluctuations is well fitted by the universal Bramwell-Holdsworth-Pinton distribution. (C) 2004 Elsevier B.V. All rights reserved.
2004
340
1-3
380
387
Pennetta, C.; Alfinito, E.; Reggiani, L.; Ruffo, S.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.11767/14004
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