We compare the confined optical frequencies measured by Raman scattering and predicted by ab initio lattice dynamics including atomic intermixing. We combined the structural information deduced from both GaAs and AlAs phonons. The residual Ga (Al) concentrations in the AlAs (GaAs) layers is estimated. They strongly decrease with decreasing growth temperature. However, a significant amount of gallium in the AlAs is evidenced even at 400-degrees-C.
Atomic intermixing in short period GaAs/AlAs superlattices / Jusserand, B.; Mollot, F.; Planel, R.; Molinari, E.; Baroni, S.. - In: SURFACE SCIENCE. - ISSN 0039-6028. - 267:1-3(1992), pp. 171-175. [10.1016/0039-6028(92)91114-Q]
Atomic intermixing in short period GaAs/AlAs superlattices
Baroni, S.
1992-01-01
Abstract
We compare the confined optical frequencies measured by Raman scattering and predicted by ab initio lattice dynamics including atomic intermixing. We combined the structural information deduced from both GaAs and AlAs phonons. The residual Ga (Al) concentrations in the AlAs (GaAs) layers is estimated. They strongly decrease with decreasing growth temperature. However, a significant amount of gallium in the AlAs is evidenced even at 400-degrees-C.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
