The diffusion mechanism of indium atoms along multiwalled carbon nanotubes is studied by means of photoemission spectromicroscopy and density functional theory calculations. The unusually high activation temperature for diffusion (≈700  K), the complex C 1s and In 3d5/2 spectra, and the calculated adsorption energies and diffusion barriers suggest that the indium transport is controlled by the concentration of defects in the C network and proceeds via hopping of indium adatoms between C vacancies.

Defect-controlled transport properties of metallic atoms along carbon nanotube surfaces / Barinov, A.; Ustunel, H.; Fabris, S.; Gregoratti, L.; Aballe, L.; Dudin, P.; Baroni, S.; Kiskinova, Maya. - In: PHYSICAL REVIEW LETTERS. - ISSN 0031-9007. - 99:4(2007), pp. 1-4. [10.1103/PhysRevLett.99.046803]

Defect-controlled transport properties of metallic atoms along carbon nanotube surfaces

Fabris, S.;Baroni, S.;Kiskinova, Maya
2007-01-01

Abstract

The diffusion mechanism of indium atoms along multiwalled carbon nanotubes is studied by means of photoemission spectromicroscopy and density functional theory calculations. The unusually high activation temperature for diffusion (≈700  K), the complex C 1s and In 3d5/2 spectra, and the calculated adsorption energies and diffusion barriers suggest that the indium transport is controlled by the concentration of defects in the C network and proceeds via hopping of indium adatoms between C vacancies.
2007
99
4
1
4
046803
Barinov, A.; Ustunel, H.; Fabris, S.; Gregoratti, L.; Aballe, L.; Dudin, P.; Baroni, S.; Kiskinova, Maya
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.11767/16235
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