We examined band discontinuities in AlAs-Ge-GaAs(001) and GaAs-Ge-AlAs(001) single-quantum-well structures, as well as individual isolated Ge-GaAs(001), Ge-AlAs(001), GaAs-Ge(001), and AlAsGe(001) heterojunctions. We found that well-defined inequivalent neutral interfaces are established in III-V/IV/III-V structures for Ge coverages as low as 1-2 monolayers. Deviations from the transitivity and commutativity rules of heterojunction behavior reflect inequivalent local interface environments rather than charged interfaces.

Microscopic capacitors and neutral interfaces in III-V/IV/III-V semiconductor heterostructures / Biasiol, G.; Sorba, L.; Bratina, G.; Nicolini, R.; Franciosi, A.; Peressi, M.; Baroni, S.; Resta, R.; Baldereschi, A.. - In: PHYSICAL REVIEW LETTERS. - ISSN 0031-9007. - 69:8(1992), pp. 1283-1286. [10.1103/PhysRevLett.69.1283]

Microscopic capacitors and neutral interfaces in III-V/IV/III-V semiconductor heterostructures

Baroni, S.;Resta, R.;
1992-01-01

Abstract

We examined band discontinuities in AlAs-Ge-GaAs(001) and GaAs-Ge-AlAs(001) single-quantum-well structures, as well as individual isolated Ge-GaAs(001), Ge-AlAs(001), GaAs-Ge(001), and AlAsGe(001) heterojunctions. We found that well-defined inequivalent neutral interfaces are established in III-V/IV/III-V structures for Ge coverages as low as 1-2 monolayers. Deviations from the transitivity and commutativity rules of heterojunction behavior reflect inequivalent local interface environments rather than charged interfaces.
1992
69
8
1283
1286
Biasiol, G.; Sorba, L.; Bratina, G.; Nicolini, R.; Franciosi, A.; Peressi, M.; Baroni, S.; Resta, R.; Baldereschi, A.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.11767/16518
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