The physical properties of CaCu3Ti4O12 (CCTO) thin films grown by metal organic chemical vapor deposition on LaAlO 3 substrates have been investigated. The structural, compositional, and optical characteristics have been evaluated, and all the collected data demonstrated that in the obtained (001) epitaxial CCTO thin films, a low defect density is present. The electrical behavior of the deposited thin films has been studied from both micro- and nanoscopic points of view and compared with the properties reported in the literature. The electrical measurements on large area capacitors indicated that in the investigated work frequency range (10 2 - 106 Hz), the CCTO films possess dielectric constants close to the theoretically predicted "intrinsic" value and almost independent of the frequency. The nanoscopic dielectric investigation demonstrated that the deposited CCTO films possess n -type semiconducting nature and that a colossal extrinsic behavior can be locally achieved.
Perovskite CaCu3Ti4O12 thin films for capacitive applications: From the growth to the nanoscopic imaging of the permittivity / Fiorenza, P.; Lo Nigro, R.; Sciuto, A.; Delugas, P.; Raineri, V.; Toro, R. G.; Catalano, M. R.; Malandrino, G.. - In: JOURNAL OF APPLIED PHYSICS. - ISSN 0021-8979. - 105:6(2009), pp. 1-6. [10.1063/1.3086198]
Perovskite CaCu3Ti4O12 thin films for capacitive applications: From the growth to the nanoscopic imaging of the permittivity
Delugas, P.;
2009-01-01
Abstract
The physical properties of CaCu3Ti4O12 (CCTO) thin films grown by metal organic chemical vapor deposition on LaAlO 3 substrates have been investigated. The structural, compositional, and optical characteristics have been evaluated, and all the collected data demonstrated that in the obtained (001) epitaxial CCTO thin films, a low defect density is present. The electrical behavior of the deposited thin films has been studied from both micro- and nanoscopic points of view and compared with the properties reported in the literature. The electrical measurements on large area capacitors indicated that in the investigated work frequency range (10 2 - 106 Hz), the CCTO films possess dielectric constants close to the theoretically predicted "intrinsic" value and almost independent of the frequency. The nanoscopic dielectric investigation demonstrated that the deposited CCTO films possess n -type semiconducting nature and that a colossal extrinsic behavior can be locally achieved.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
