The origin of the random telegraph signal (RTS) observed in semiconductors-based electronic devices is still subject to debates. In this work, by means of atomistic simulations, typical clusters of defects as could be obtained after irradiation or implantation are studied as a possible cause for RTS. It is shown that:(i) a cluster of defects is highly metastable,(ii) it introduces several electronic states in the band gap,(iii) it has an electronic cross section much higher than the one of point defects.These three points can simultaneously explain why an electronhole generation rate can switch with time, while respecting the experimental measurement.

Clusters of Defects as a Possible Origin of Random Telegraph Signal in Imager Devices: a DFT based Study / Jay, A; Hemeryck, A; Cristiano, F; Rideau, D; Julliard, Pl; Goiffon, V; Leroch, A; Richard, N; Samos, Lm; De Gironcoli, S. - (2021), pp. 128-132. ((Intervento presentato al convegno 2021 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) [10.1109/SISPAD54002.2021.9592553].

Clusters of Defects as a Possible Origin of Random Telegraph Signal in Imager Devices: a DFT based Study

De Gironcoli, S
2021

Abstract

The origin of the random telegraph signal (RTS) observed in semiconductors-based electronic devices is still subject to debates. In this work, by means of atomistic simulations, typical clusters of defects as could be obtained after irradiation or implantation are studied as a possible cause for RTS. It is shown that:(i) a cluster of defects is highly metastable,(ii) it introduces several electronic states in the band gap,(iii) it has an electronic cross section much higher than the one of point defects.These three points can simultaneously explain why an electronhole generation rate can switch with time, while respecting the experimental measurement.
2021 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
128
132
978-1-6654-0685-7
IEEE
Jay, A; Hemeryck, A; Cristiano, F; Rideau, D; Julliard, Pl; Goiffon, V; Leroch, A; Richard, N; Samos, Lm; De Gironcoli, S
File in questo prodotto:
File Dimensione Formato  
Article_RTS_Clusters.pdf

non disponibili

Licenza: Non specificato
Dimensione 1.05 MB
Formato Adobe PDF
1.05 MB Adobe PDF   Visualizza/Apri   Richiedi una copia

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.11767/128453
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 0
  • ???jsp.display-item.citation.isi??? 1
social impact