In this work, we develop a new neural network potential for silicon and perform accurate molecular dynamics simulations of the liquid, amorphous and diamond phases. The potential is tested against several physical properties and the solid phase epitaxy process is simulated.

Developing a Neural Network potential to investigate interface phenomena in solid-phase epitaxy / Lot, R; Martin-Samos, L; de Gironcoli, S; Hemeryck, A. - (2021), pp. 1-5. ((Intervento presentato al convegno 2021 IEEE 16th Nanotechnology Materials and Devices Conference (NMDC) [10.1109/NMDC50713.2021.9677541].

Developing a Neural Network potential to investigate interface phenomena in solid-phase epitaxy

Lot, R
;
de Gironcoli, S;
2021

Abstract

In this work, we develop a new neural network potential for silicon and perform accurate molecular dynamics simulations of the liquid, amorphous and diamond phases. The potential is tested against several physical properties and the solid phase epitaxy process is simulated.
2021 IEEE 16th Nanotechnology Materials and Devices Conference (NMDC) Vancouver, Canada
1
5
978-1-6654-1892-8
IEEE
Lot, R; Martin-Samos, L; de Gironcoli, S; Hemeryck, A
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.11767/128470
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