In the present paper we discuss the electronic properties of semiconductor heterojunctions, focusing on the band offset problem. We address interface-specific phenomena, where the conditions of growth -- including controlled contamination and strain effects -- may significantly alter the properties of the junction. We study the effects of ultrathin intralayers (i.e., heterovalent implantation) both at homojunctions (such as GaAs/Ge/GaAs) and heterojunctions (such as GaAs/Si/AlAs). In both cases, our theory demonstrates how the intralayers control the band offset: this result is confirmed by recent experimental observation in several systems. We then consider the band-offset engineering at lattice-mismatched heterojunctions, studying the paradigmatic case GaAs/Si. We evaluate the band-offset for several fully relaxed inequivalent interfaces. Both macroscopic strain and microscopic morphology effects are considered.
|Titolo:||Band offsets engineering at semiconductor heterojunctions|
|Autori:||Peressi, M.; Colombo, L.; Baldareschi, A.; Resta, R.; Baroni, S.|
|Titolo del libro:||Physical Concepts and Materials for Novel Optoelectronic Device Applications II|
|Nome editore:||Spie. Digital Library|
|Data di pubblicazione:||1993|
|Digital Object Identifier (DOI):||10.1117/12.162746|
|Appare nelle tipologie:||4.1 Contribution in Conference proceedings|