Resta, Raffaele

Resta, Raffaele  

Risultati 1 - 20 di 22 (tempo di esecuzione: 0.003 secondi).
Titolo Data di pubblicazione Autore(i) File
Ab initio calculation of the low-frequency Raman cross section in silicon 1-gen-1986 Baroni, S.Resta, R.
Ab initio calculation of the macroscopic dielectric constant in silicon 1-gen-1986 Baroni, S.Resta, R.
Absolute deformation potentials in semiconductors 1-gen-1990 Resta, R.Baroni, S. +
Band offsets engineering at semiconductor heterojunctions 1-gen-1993 Resta, R.Baroni, S. +
Band Offsets in Lattice-Matched Heterojunctions: A Model and First-Principles Calculations for GaAs/AlAs 1-gen-1988 Baroni, S.Resta, Raffaele +
Control of Ge homojunction band offsets via ultrathin GaAs dipole layers 1-gen-1992 Baroni, S.Resta, R. +
Control of Ge homojunction band offsets via ultrathin Ga–As dipole layers 1-gen-1991 Baroni, S.Resta, R. +
Density-functional theory of the dielectric constant: gradient-corrected calculation for silicon 1-gen-1994 Dal Corso, A.Baroni, S.Resta, R.
Dynamical-charge neutrality at a crystal surface 1-gen-1998 Resta, R.Baroni, S. +
Effects of interface morphology on Schottky-barrier heights: A case study on Al/GaAs(001) 1-gen-1997 Resta, R.Baroni, S. +
Electronic structure of InP/Ga0.47In0.53As interfaces 1-gen-1990 Baroni, S.Resta, R. +
Electronic-properties of isocalent anf hetrovalent semiconductor interfaces 1-gen-1989 Resta, R.Baroni, S. +
Engineering of Semiconductor Heterostructures by Ultrathin Control Layers 1-gen-1993 Resta, R.Baroni, S. +
Local interface composition and band discontinuities in heterovalent heterostructures 1-gen-1994 Baroni, S.Resta, R. +
Microscopic capacitors and neutral interfaces in III-V/IV/III-V semiconductor heterostructures 1-gen-1992 Baroni, S.Resta, R. +
Microscopic manipulation of homojunction band lineups 1-gen-1992 Baroni, S.Resta, R. +
Nonlinear piezoelectricity in CdTe 1-gen-1993 Dal Corso,AResta, R.Baroni, S.
Piezoelectric properties of III-V semiconductors from first-principles linear-response theory 1-gen-1989 De Gironcoli, S.Baroni, S.Resta, R.
Piezoelectricity in III-V and II-VI semiconductors: A systematic ab-initio calculation 1-gen-1990 De Gironcoli, S.Baroni, S.Resta, R.
Structural and electronic properties of strained Si/GaAs heterostructures 1-gen-1993 Resta, R.Baroni, S. +