Dirac fermions play a central role in the study of topological phases, for they can generate a variety of exotic states, such as Weyl semimetals and topological insulators. The control and manipulation of Dirac fermions constitute a fundamental step toward the realization of novel concepts of electronic devices and quantum computation. By means of Angle-Resolved PhotoEmission Spectroscopy (ARPES) experiments and ab initio simulations, here, we show that Dirac states can be effectively tuned by doping a transition metal sulfide, BaNiS2, through Co/Ni substitution. The symmetry and chemical characteristics of this material, combined with the modification of the charge-transfer gap of BaCo1-xNixS2 across its phase diagram, lead to the formation of Dirac lines, whose position in k-space can be displaced along the Gamma - M symmetry direction and their form reshaped. Not only does the doping x tailor the location and shape of the Dirac bands, but it also controls the metal-insulator transition in the same compound, making BaCo1-xNixS2 a model system to functionalize Dirac materials by varying the strength of electron correlations.

Moving Dirac nodes by chemical substitution / Nilforoushan, Niloufar; Casula, Michele; Amaricci, Adriano; Caputo, Marco; Caillaux, Jonathan; Khalil, Lama; Papalazarou, Evangelos; Simon, Pascal; Perfetti, Luca; Vobornik, Ivana; Das, Pranab Kumar; Fujii, Jun; Barinov, Alexei; Santos-Cottin, David; Klein, Yannick; Fabrizio, Michele; Gauzzi, Andrea; Marsi, Marino. - In: PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA. - ISSN 0027-8424. - 118:33(2021), pp. 1-8. [10.1073/pnas.2108617118]

Moving Dirac nodes by chemical substitution

Amaricci, Adriano;Fabrizio, Michele;
2021

Abstract

Dirac fermions play a central role in the study of topological phases, for they can generate a variety of exotic states, such as Weyl semimetals and topological insulators. The control and manipulation of Dirac fermions constitute a fundamental step toward the realization of novel concepts of electronic devices and quantum computation. By means of Angle-Resolved PhotoEmission Spectroscopy (ARPES) experiments and ab initio simulations, here, we show that Dirac states can be effectively tuned by doping a transition metal sulfide, BaNiS2, through Co/Ni substitution. The symmetry and chemical characteristics of this material, combined with the modification of the charge-transfer gap of BaCo1-xNixS2 across its phase diagram, lead to the formation of Dirac lines, whose position in k-space can be displaced along the Gamma - M symmetry direction and their form reshaped. Not only does the doping x tailor the location and shape of the Dirac bands, but it also controls the metal-insulator transition in the same compound, making BaCo1-xNixS2 a model system to functionalize Dirac materials by varying the strength of electron correlations.
118
33
1
8
e2108617118
Nilforoushan, Niloufar; Casula, Michele; Amaricci, Adriano; Caputo, Marco; Caillaux, Jonathan; Khalil, Lama; Papalazarou, Evangelos; Simon, Pascal; Perfetti, Luca; Vobornik, Ivana; Das, Pranab Kumar; Fujii, Jun; Barinov, Alexei; Santos-Cottin, David; Klein, Yannick; Fabrizio, Michele; Gauzzi, Andrea; Marsi, Marino
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/20.500.11767/128697
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