We discuss the spectroscopic fingerprints that a surface Mott-Hubbard insulator should show at the intra-atomic level. The test case considered is that of the Si-terminated SiC(0001)root 3 x root 3 surface, which is known experimentally to be insulating. We argue that, owing to the Mott-Hubbard phenomenon, spin unpaired electrons in the Si adatom dangling bonds are expected to,give rise to an Si 2p core level spectrum with a characteristic three-peaked structure, as seen experimentally. This structure results from the joint effect of intra-atomic exchange, spatial anisotropy, and spin-orbit coupling. Auger intensities are also discussed.
Spectroscopic fingerprints of a surface Mott-Hubbard insulator: the case of SiC(0001) / Santoro, Giuseppe E.; Scandolo, S.; Tosatti, E.. - In: SURFACE SCIENCE. - ISSN 0039-6028. - 454:1(2000), pp. 534-538. [10.1016/S0039-6028(00)00236-3]
Spectroscopic fingerprints of a surface Mott-Hubbard insulator: the case of SiC(0001)
Santoro, Giuseppe E.;Tosatti, E.
2000-01-01
Abstract
We discuss the spectroscopic fingerprints that a surface Mott-Hubbard insulator should show at the intra-atomic level. The test case considered is that of the Si-terminated SiC(0001)root 3 x root 3 surface, which is known experimentally to be insulating. We argue that, owing to the Mott-Hubbard phenomenon, spin unpaired electrons in the Si adatom dangling bonds are expected to,give rise to an Si 2p core level spectrum with a characteristic three-peaked structure, as seen experimentally. This structure results from the joint effect of intra-atomic exchange, spatial anisotropy, and spin-orbit coupling. Auger intensities are also discussed.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
