We present a self-consistent pseudopotential calculation of the valence-band offset at the GaAs/InAs (001) strained interface which is chosen as an example of isovalent, common-anion, lattice-mismatched heterojunctions. Our results show that the valence-band offset can be tuned by about 0.5 eV going from GaAs to InAs substrates, mainly due to the different effect of strain on the topmost valence-band state of the two bulk materials.
Ab initio calculation of the band offset at strained GaAs/InAs (001) heterojunctions / Tit, N.; Peressi, M.; Baroni, S.. - In: PHYSICAL REVIEW. B, CONDENSED MATTER. - ISSN 0163-1829. - 48:23(1993), pp. 17607-17610. [10.1103/PhysRevB.48.17607]
Ab initio calculation of the band offset at strained GaAs/InAs (001) heterojunctions
Baroni, S.
1993-01-01
Abstract
We present a self-consistent pseudopotential calculation of the valence-band offset at the GaAs/InAs (001) strained interface which is chosen as an example of isovalent, common-anion, lattice-mismatched heterojunctions. Our results show that the valence-band offset can be tuned by about 0.5 eV going from GaAs to InAs substrates, mainly due to the different effect of strain on the topmost valence-band state of the two bulk materials.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
