We report far-infrared reflectivity measurements on (GaAs)m/(AlAs)n superlattices (SL's) with systematically varied layer thicknesses in the range 1 less-than-or-equal-to m,n less-than-or-equal-to 7. Taking advantage of an appropriate choice of the total SL thickness D less-than-or-equal-to 0.3-mu-m, we measure the frequencies of AlAs-like TO1 confined phonons from the peak of the reststrahlen band. The GaAs-like TO1 frequencies are obtained by fitting reflectivity spectra to the SL dielectric-response-theory model. Microscopic calculations of confined TO frequencies are performed within an ab initio scheme and successfully compared with the experimental data.
Infrared reflectivity by transverse-optical phonons in (GaAs)m/(AlAs)n ultrathin-layer superlattices / Scamarcio, G.; Tapfer, L.; König, W.; Fischer, A.; Ploog, K.; Molinari, E.; Baroni, S.; Giannozzi, P.; De Gironcoli, S.. - In: PHYSICAL REVIEW. B, CONDENSED MATTER. - ISSN 0163-1829. - 43:18(1991), pp. 14754-14757. [10.1103/PhysRevB.43.14754]
Infrared reflectivity by transverse-optical phonons in (GaAs)m/(AlAs)n ultrathin-layer superlattices
Baroni, S.;Giannozzi, P.;De Gironcoli, S.
1991-01-01
Abstract
We report far-infrared reflectivity measurements on (GaAs)m/(AlAs)n superlattices (SL's) with systematically varied layer thicknesses in the range 1 less-than-or-equal-to m,n less-than-or-equal-to 7. Taking advantage of an appropriate choice of the total SL thickness D less-than-or-equal-to 0.3-mu-m, we measure the frequencies of AlAs-like TO1 confined phonons from the peak of the reststrahlen band. The GaAs-like TO1 frequencies are obtained by fitting reflectivity spectra to the SL dielectric-response-theory model. Microscopic calculations of confined TO frequencies are performed within an ab initio scheme and successfully compared with the experimental data.File | Dimensione | Formato | |
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