The InAs/GaSb(001) valence-band offset is calculated for the two inequivalent GaAs-like and InSb-like interfaces and found to coincide to within approximate to 30 meV. This result is rationalized and generalized to arbitrary composition profiles and induced strain by using a simple model, based on the linear response theory, which is validated by a number of accurate first-principles calculations for intermixed interfaces. (C) 1996 American Institute of Physics.

InAs/GaSb(001) valence-band offset: Independence of interface composition and strain / Montanari, B.; Peressi, M.; Baroni, S.; Molinari, E.. - In: APPLIED PHYSICS LETTERS. - ISSN 0003-6951. - 69:21(1996), pp. 3218-3220. [10.1063/1.118015]

InAs/GaSb(001) valence-band offset: Independence of interface composition and strain

Baroni, S.;
1996

Abstract

The InAs/GaSb(001) valence-band offset is calculated for the two inequivalent GaAs-like and InSb-like interfaces and found to coincide to within approximate to 30 meV. This result is rationalized and generalized to arbitrary composition profiles and induced strain by using a simple model, based on the linear response theory, which is validated by a number of accurate first-principles calculations for intermixed interfaces. (C) 1996 American Institute of Physics.
69
21
3218
3220
Montanari, B.; Peressi, M.; Baroni, S.; Molinari, E.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/20.500.11767/16478
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