The InAs/GaSb(001) valence-band offset is calculated for the two inequivalent GaAs-like and InSb-like interfaces and found to coincide to within approximate to 30 meV. This result is rationalized and generalized to arbitrary composition profiles and induced strain by using a simple model, based on the linear response theory, which is validated by a number of accurate first-principles calculations for intermixed interfaces. (C) 1996 American Institute of Physics.
InAs/GaSb(001) valence-band offset: Independence of interface composition and strain / Montanari, B.; Peressi, M.; Baroni, S.; Molinari, E.. - In: APPLIED PHYSICS LETTERS. - ISSN 0003-6951. - 69:21(1996), pp. 3218-3220.
Titolo: | InAs/GaSb(001) valence-band offset: Independence of interface composition and strain |
Autori: | Montanari, B.; Peressi, M.; Baroni, S.; Molinari, E. |
Rivista: | |
Data di pubblicazione: | 1996 |
Volume: | 69 |
Fascicolo: | 21 |
Pagina iniziale: | 3218 |
Pagina finale: | 3220 |
Digital Object Identifier (DOI): | http://dx.doi.org/10.1063/1.118015 |
Appare nelle tipologie: | 1.1 Journal article |