A combined Raman and ab initio lattice dynamical study of ultrathin (GaAs)4(AlAs)4 superlattices, focusing mainly on AlAs-like vibrations, clearly shows that a significant amount of interdiffusion occurs in these samples when grown at conventional molecular-beam epitaxy temperatures between 580 and 640-degrees-C. At these temperatures, growth interruption is found to have little impact on the structural quality of the superlattices.
Cation interdiffusion in GaAs‐AlAs superlattices measured with Raman spectroscopy / Grant, J.; Menéndez, J.; Pfeiffer, L. N.; West, K. W.; Molinari, E.; Baroni, S.. - In: APPLIED PHYSICS LETTERS. - ISSN 0003-6951. - 59:22(1991), pp. 2859-2861. [10.1063/1.105833]
Cation interdiffusion in GaAs‐AlAs superlattices measured with Raman spectroscopy
Baroni, S.
1991-01-01
Abstract
A combined Raman and ab initio lattice dynamical study of ultrathin (GaAs)4(AlAs)4 superlattices, focusing mainly on AlAs-like vibrations, clearly shows that a significant amount of interdiffusion occurs in these samples when grown at conventional molecular-beam epitaxy temperatures between 580 and 640-degrees-C. At these temperatures, growth interruption is found to have little impact on the structural quality of the superlattices.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
