A combined Raman and ab initio lattice dynamical study of ultrathin (GaAs)4(AlAs)4 superlattices, focusing mainly on AlAs-like vibrations, clearly shows that a significant amount of interdiffusion occurs in these samples when grown at conventional molecular-beam epitaxy temperatures between 580 and 640-degrees-C. At these temperatures, growth interruption is found to have little impact on the structural quality of the superlattices.

Cation interdiffusion in GaAs‐AlAs superlattices measured with Raman spectroscopy / Grant, J.; Menéndez, J.; Pfeiffer, L. N.; West, K. W.; Molinari, E.; Baroni, S.. - In: APPLIED PHYSICS LETTERS. - ISSN 0003-6951. - 59:22(1991), pp. 2859-2861. [10.1063/1.105833]

Cation interdiffusion in GaAs‐AlAs superlattices measured with Raman spectroscopy

Baroni, S.
1991-01-01

Abstract

A combined Raman and ab initio lattice dynamical study of ultrathin (GaAs)4(AlAs)4 superlattices, focusing mainly on AlAs-like vibrations, clearly shows that a significant amount of interdiffusion occurs in these samples when grown at conventional molecular-beam epitaxy temperatures between 580 and 640-degrees-C. At these temperatures, growth interruption is found to have little impact on the structural quality of the superlattices.
1991
59
22
2859
2861
Grant, J.; Menéndez, J.; Pfeiffer, L. N.; West, K. W.; Molinari, E.; Baroni, S.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.11767/16520
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