We study the doping-driven Mott metal-insulator transition (MIT) in the periodic Anderson model set in the Mott-Hubbard regime. A striking asymmetry for electron- or hole-driven transitions is found. The electron-doped MIT at larger U is similar to the one found in the single band Hubbard model, with a first-order character due to coexistence of solutions. The hole-doped MIT, in contrast, is second order and can be described as the delocalization of Zhang-Rice singlets.
Asymmetry between the electron- and hole-doped Mott transition in the periodic Anderson model / Sordi, G.; Amaricci, A.; Rozenberg, M. J.. - In: PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS. - ISSN 1098-0121. - 80:3(2009), pp. 1-15. [10.1103/PhysRevB.80.035129]
Asymmetry between the electron- and hole-doped Mott transition in the periodic Anderson model
Amaricci, A.;
2009-01-01
Abstract
We study the doping-driven Mott metal-insulator transition (MIT) in the periodic Anderson model set in the Mott-Hubbard regime. A striking asymmetry for electron- or hole-driven transitions is found. The electron-doped MIT at larger U is similar to the one found in the single band Hubbard model, with a first-order character due to coexistence of solutions. The hole-doped MIT, in contrast, is second order and can be described as the delocalization of Zhang-Rice singlets.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
