First principles calculations of the impact of Te local doping on the effective work function of a Mo/HfO(2) interface are presented. The undoped interface has a p-type effective work function. We find that interstitial Te and Te in the metal both make the effective work function more p-type. More importantly, Te substituting for O or Hf in the dielectric near the interface-energetically stable for all growth conditions-decreases the effective work function, making it more n-type. (c) 2008 American Institute of Physics.
Te-induced modulation of the Mo/HfO2 interface effective work function / Xiong, K; Delugas, Pietro Davide; Hooker, Jc; Fiorentini, V; Robertson, J; Liu, Dm; Pourtois, G.. - In: APPLIED PHYSICS LETTERS. - ISSN 0003-6951. - 92:11(2008). [10.1063/1.2870078]
Te-induced modulation of the Mo/HfO2 interface effective work function
DELUGAS, Pietro Davide;
2008-01-01
Abstract
First principles calculations of the impact of Te local doping on the effective work function of a Mo/HfO(2) interface are presented. The undoped interface has a p-type effective work function. We find that interstitial Te and Te in the metal both make the effective work function more p-type. More importantly, Te substituting for O or Hf in the dielectric near the interface-energetically stable for all growth conditions-decreases the effective work function, making it more n-type. (c) 2008 American Institute of Physics.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.