We study by dynamical mean-field theory the ground state of a quarter-filled Hubbard model of two bands with different bandwidths. At half-filling, this model is known to display an orbital selective Mott transition, with the narrower band undergoing Mott localization while the wider one being still itinerant. At quarter-filling, the physical behavior is different and to some extent reversed. The interaction generates an effective crystal field splitting, absent in the Hamiltonian, that tends to empty the narrower band in favor of the wider one, which also become more correlated than the former at odds with the orbital selective paradigm. Upon increasing the interaction, the depletion of the narrower band can continue till it empties completely and the system undergoes a topological Lifshitz transition into a half-filled single-band metal that eventually turns insulating. Alternatively, when the two bandwidths are not too different, a first order Mott transition intervenes before the Lifshitz's one. The properties of the Mott insulator are significantly affected by the interplay between spin and orbital degrees of freedom.

Correlation-driven Lifshitz transition and orbital order in a two-band Hubbard model / Grandi, Francesco; Amaricci, A.; Capone, M.; Fabrizio, M.. - In: PHYSICAL REVIEW. B. - ISSN 2469-9950. - 98:4(2018), pp. 1-10. [10.1103/PhysRevB.98.045105]

Correlation-driven Lifshitz transition and orbital order in a two-band Hubbard model

Grandi, Francesco;Amaricci, A.;Capone, M.;Fabrizio, M.
2018

Abstract

We study by dynamical mean-field theory the ground state of a quarter-filled Hubbard model of two bands with different bandwidths. At half-filling, this model is known to display an orbital selective Mott transition, with the narrower band undergoing Mott localization while the wider one being still itinerant. At quarter-filling, the physical behavior is different and to some extent reversed. The interaction generates an effective crystal field splitting, absent in the Hamiltonian, that tends to empty the narrower band in favor of the wider one, which also become more correlated than the former at odds with the orbital selective paradigm. Upon increasing the interaction, the depletion of the narrower band can continue till it empties completely and the system undergoes a topological Lifshitz transition into a half-filled single-band metal that eventually turns insulating. Alternatively, when the two bandwidths are not too different, a first order Mott transition intervenes before the Lifshitz's one. The properties of the Mott insulator are significantly affected by the interplay between spin and orbital degrees of freedom.
98
4
1
10
045105
https://journals.aps.org/prb/abstract/10.1103/PhysRevB.98.045105
https://arxiv.org/abs/1803.08008v2
Grandi, Francesco; Amaricci, A.; Capone, M.; Fabrizio, M.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/20.500.11767/82735
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