We study the dynamical behavior of doped electronic systems subject to a global ramp of the repulsive Hubbard interaction. We start with formulating a real-time generalization of the fluctuation-exchange approximation. Implementing this numerically, we investigate the weak-coupling regime of the Hubbard model both in the electron-doped and hole-doped regimes. The results show that both local and nonlocal (momentum-dependent) observables evolve toward a thermal state, although the temperature of the final state depends on the ramp duration and the band filling. We further reveal a momentum-dependent relaxation rate of the distribution function in doped systems and trace back its physical origin to the anisotropic self-energies in the momentum space.
Momentum-dependent relaxation dynamics of the doped repulsive Hubbard model / Sayyad, S.; Tsuji, N.; Vaezi, A.; Capone, M.; Eckstein, M.; Aoki, H.. - In: PHYSICAL REVIEW. B. - ISSN 2469-9950. - 99:16(2019), pp. 1-10. [10.1103/PhysRevB.99.165132]
Momentum-dependent relaxation dynamics of the doped repulsive Hubbard model
Capone M.;
2019-01-01
Abstract
We study the dynamical behavior of doped electronic systems subject to a global ramp of the repulsive Hubbard interaction. We start with formulating a real-time generalization of the fluctuation-exchange approximation. Implementing this numerically, we investigate the weak-coupling regime of the Hubbard model both in the electron-doped and hole-doped regimes. The results show that both local and nonlocal (momentum-dependent) observables evolve toward a thermal state, although the temperature of the final state depends on the ramp duration and the band filling. We further reveal a momentum-dependent relaxation rate of the distribution function in doped systems and trace back its physical origin to the anisotropic self-energies in the momentum space.File | Dimensione | Formato | |
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