Band offsets of 0.35-0.45 eV are produced at Ge homojunctions by placing a monolayer of As and an adjacent monolayer of Ga between the two Ge bulks. The "Ga-first" and "As-first" growth sequences exhibit band offsets of similar magnitude but opposite sign, consistent with a truly dipolar effect. To our knowledge, this is the first time that intralayer control of band discontinuities is extended to homojunctions, thereby expanding the potential domain of band offset engineering. The offsets were measured with photoemission spectroscopy. The existence, sign, and approximate magnitude of the effect are correctly predicted by a "theoretical alchemy" model.
Control of Ge homojunction band offsets via ultrathin GaAs dipole layers / Mckinley, J. T.; Hwu, Y.; Koltenbah, B. E. C.; Margaritondo, G.; Baroni, S.; Resta, R.. - In: APPLIED SURFACE SCIENCE. - ISSN 0169-4332. - 56-58:part 2(1992), pp. 762-765. [10.1016/0169-4332(92)90334-T]
Control of Ge homojunction band offsets via ultrathin GaAs dipole layers
Baroni, S.;Resta, R.
1992-01-01
Abstract
Band offsets of 0.35-0.45 eV are produced at Ge homojunctions by placing a monolayer of As and an adjacent monolayer of Ga between the two Ge bulks. The "Ga-first" and "As-first" growth sequences exhibit band offsets of similar magnitude but opposite sign, consistent with a truly dipolar effect. To our knowledge, this is the first time that intralayer control of band discontinuities is extended to homojunctions, thereby expanding the potential domain of band offset engineering. The offsets were measured with photoemission spectroscopy. The existence, sign, and approximate magnitude of the effect are correctly predicted by a "theoretical alchemy" model.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
