We tested the theoretical prediction that the band structures on the opposite sides of a homojunction can be artificially displaced in energy with respect to each other by means of double intralayers of atomiclike thickness, producing band discontinuities of potential interest for practical applications. Evidence of such discontinuities was found when Ga-As, Al-As, Ga-P, or Al-P intralayers were inserted between Si and Si or Ge and Ge.

Microscopic manipulation of homojunction band lineups / Marsi, M.; La Rosa, S.; Hwu, Y.; Gozzo, F.; Coluzza, C.; Baldereschi, A.; Margaritondo, G.; Mckinley, J. T.; Baroni, S.; Resta, R.. - In: JOURNAL OF APPLIED PHYSICS. - ISSN 0021-8979. - 71:4(1992), pp. 2048-2050. [10.1063/1.351152]

Microscopic manipulation of homojunction band lineups

Baroni, S.;Resta, R.
1992-01-01

Abstract

We tested the theoretical prediction that the band structures on the opposite sides of a homojunction can be artificially displaced in energy with respect to each other by means of double intralayers of atomiclike thickness, producing band discontinuities of potential interest for practical applications. Evidence of such discontinuities was found when Ga-As, Al-As, Ga-P, or Al-P intralayers were inserted between Si and Si or Ge and Ge.
1992
71
4
2048
2050
Marsi, M.; La Rosa, S.; Hwu, Y.; Gozzo, F.; Coluzza, C.; Baldereschi, A.; Margaritondo, G.; Mckinley, J. T.; Baroni, S.; Resta, R.
File in questo prodotto:
Non ci sono file associati a questo prodotto.

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.11767/16519
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 30
  • ???jsp.display-item.citation.isi??? 31
social impact