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EnglishWe predict a novel electronically driven phase for the recently created C/Si(111) surface at 1/3 monolayer coverage. Whereas the isoelectronic surface Sn/Ge(111) is a 3x3 distorted metal and Si/SiC(0001) is an undistorted magnetic Mott insulator, the new phase combines both features. Two of three adatoms in C/Si(111) should form a distorted (3x3) honeycomb sublattice, the third an undistorted insulating and magnetic triangular sublattice. The generally conflicting elements, namely, band energy, favoring distortion, and strong electron correlations favoring a Mott state, actually conspire in this case. This kind of state represents the surface analog of the Fazekas-Tosatti state in the charge density wave compound 1T-TaS2.
Novel electronically driven surface phase predicted in C/Si(111) / Profeta, G.; Tosatti, E.. - In: PHYSICAL REVIEW LETTERS. - ISSN 0031-9007. - 95:20(2005), pp. 1-4.
| Titolo: | Novel electronically driven surface phase predicted in C/Si(111) |
| Autori: | Profeta, G.; Tosatti, E. |
| Rivista: | |
| Data di pubblicazione: | 2005 |
| Volume: | 95 |
| Fascicolo: | 20 |
| Pagina iniziale: | 1 |
| Pagina finale: | 4 |
| Numero di Articolo: | 206801 |
| Digital Object Identifier (DOI): | http://dx.doi.org/10.1103/PhysRevLett.95.206801 |
| URL: | https://doi.org/10.1103/PhysRevLett.95.206801 |
| Appare nelle tipologie: | 1.1 Journal article |
