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EnglishThis thesis is organized as follows: • In chapter 2, our present understanding of the silicon vacancy and of the self-diffusion process is shortly reviewed. • In chapter 3 the First Principles Molecular Dynamics method is illustrated and discussed. • In chapter 4 the method used to compute the vacancy concentration is exposed. • In chapter 5 the results of calculations of the vacancy concentration and of the vacancy induced self-diffusion are exposed and compared with the available experimental data. • In the last chapter we present our conclusions.
Lattice Vacancies and Diffusion Processes in Crystalline Silicon: a First-Principle Molecular Dynamics Study(1990 Oct 29).
| Autori: | Smargiassi, Enrico |
| Titolo: | Lattice Vacancies and Diffusion Processes in Crystalline Silicon: a First-Principle Molecular Dynamics Study |
| Relatore/i interni: | |
| Data di pubblicazione: | 29-ott-1990 |
| Appare nelle tipologie: | 8.1 PhD thesis |
File in questo prodotto:
| File | Descrizione | Tipologia | Licenza | |
|---|---|---|---|---|
| 1963_5767_PhD_Smargiassi_Enrico.pdf | Tesi | Non specificato | Open Access Visualizza/Apri |
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