This thesis is organized as follows: • In chapter 2, our present understanding of the silicon vacancy and of the self-diffusion process is shortly reviewed. • In chapter 3 the First Principles Molecular Dynamics method is illustrated and discussed. • In chapter 4 the method used to compute the vacancy concentration is exposed. • In chapter 5 the results of calculations of the vacancy concentration and of the vacancy induced self-diffusion are exposed and compared with the available experimental data. • In the last chapter we present our conclusions.

Lattice Vacancies and Diffusion Processes in Crystalline Silicon: a First-Principle Molecular Dynamics Study(1990 Oct 29).

Lattice Vacancies and Diffusion Processes in Crystalline Silicon: a First-Principle Molecular Dynamics Study

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1990

Abstract

This thesis is organized as follows: • In chapter 2, our present understanding of the silicon vacancy and of the self-diffusion process is shortly reviewed. • In chapter 3 the First Principles Molecular Dynamics method is illustrated and discussed. • In chapter 4 the method used to compute the vacancy concentration is exposed. • In chapter 5 the results of calculations of the vacancy concentration and of the vacancy induced self-diffusion are exposed and compared with the available experimental data. • In the last chapter we present our conclusions.
Smargiassi, Enrico
Car, Roberto
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.11767/4528
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