We present a novel ab initio approach to piezoelectricity. The piezoelectric tensor is given by the stress induced by a homogeneous electric field. The perturbation is treated self-consistently by linear response, thus avoiding both supercells and numerical differentiation. We calculate the piezoelectric constants of none III-V semiconductors: as a by-product we also provide the first systematic study of zone-center phonons, internal strain parameters, effective charges, and dielectric constants. Our results agree very well with experiments where available, and allow predictions where they are not.
Piezoelectric properties of III-V semiconductors from first-principles linear-response theory / De Gironcoli, S.; Baroni, S.; Resta, R.. - In: PHYSICAL REVIEW LETTERS. - ISSN 0031-9007. - 62:24(1989), pp. 2853-2856. [10.1103/PhysRevLett.62.2853]
Piezoelectric properties of III-V semiconductors from first-principles linear-response theory
De Gironcoli, S.;Baroni, S.;Resta, R.
1989-01-01
Abstract
We present a novel ab initio approach to piezoelectricity. The piezoelectric tensor is given by the stress induced by a homogeneous electric field. The perturbation is treated self-consistently by linear response, thus avoiding both supercells and numerical differentiation. We calculate the piezoelectric constants of none III-V semiconductors: as a by-product we also provide the first systematic study of zone-center phonons, internal strain parameters, effective charges, and dielectric constants. Our results agree very well with experiments where available, and allow predictions where they are not.File | Dimensione | Formato | |
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