The local Zn/Se relative concentration at the interface in ZnSe-GaAs(001) heterostructures synthesized by molecular beam epitaxy was found to be controlled by the Zn/Se flux ratio employed during the early growth stage of ZnSe on GaAs. Correspondingly, the valence band discontinuity varies from 1.20 eV (Zn-rich interface) to 0.58 eV (Se-rich interface). Comparison with the results of first-principles calculations suggests that the observed trend in band offsets is related to the establishment of neutral interfaces with different atomic configurations.
Local interface composition and band discontinuities in heterovalent heterostructures / Nicolini, R.; Vanzetti, L.; Mula, G.; Bratina, G.; Sorba, L.; Franciosi, A.; Peressi, M.; Baroni, S.; Resta, R.; Baldereschi, A.; Angelo, J. E.; Gerberich, W. W.. - In: PHYSICAL REVIEW LETTERS. - ISSN 0031-9007. - 72:2(1994), pp. 294-297. [10.1103/PhysRevLett.72.294]
Local interface composition and band discontinuities in heterovalent heterostructures
Baroni, S.;Resta, R.;
1994-01-01
Abstract
The local Zn/Se relative concentration at the interface in ZnSe-GaAs(001) heterostructures synthesized by molecular beam epitaxy was found to be controlled by the Zn/Se flux ratio employed during the early growth stage of ZnSe on GaAs. Correspondingly, the valence band discontinuity varies from 1.20 eV (Zn-rich interface) to 0.58 eV (Se-rich interface). Comparison with the results of first-principles calculations suggests that the observed trend in band offsets is related to the establishment of neutral interfaces with different atomic configurations.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
