Sfoglia per Autore
1ST-PRINCIPLES CALCULATION OF THE VIBRATIONAL PROPERTIES OF GAXAL1-XAS ALLOYS
1990-01-01 Baroni, S; DE GIRONCOLI, S; Giannozzi, P
Piezoelectricity in III-V and II-VI semiconductors: A systematic ab-initio calculation
1990-01-01 De Gironcoli, S.; Baroni, S.; Resta, R.
Cation interdiffusion in GaAs‐AlAs superlattices measured with Raman spectroscopy
1991-01-01 Grant, J.; Menéndez, J.; Pfeiffer, L. N.; West, K. W.; Molinari, E.; Baroni, S.
Structure and thermodynamics of SixGe1−x alloys from ab initio Monte Carlo simulations
1991-01-01 De Gironcoli, S.; Giannozzi, P.; Baroni, S.
Surface phonons and dipole activity of Si(111)2×1 from ab initio calculations
1991-01-01 Ancilotto, F; Selloni, A; Andreoni, W; Baroni, Stefano; Car, R; Parrinello, M.
Valence-band offsets at strained Si/Ge interfaces
1991-01-01 Colombo, L.; Resta, R.; Baroni, S.
Phonon Spectra of Ultrathin GaAs/AlAs Superlattices
1991-01-01 Molinari, E.; Baroni, S.; Giannozzi, S.; De Gironcoli, S.
Ab initio calculation of phonon dispersions in semiconductors
1991-01-01 Giannozzi, P.; De Gironcoli, S.; Pavone, P.; Baroni, S.
Infrared reflectivity by transverse-optical phonons in (GaAs)m/(AlAs)n ultrathin-layer superlattices
1991-01-01 Scamarcio, G.; Tapfer, L.; König, W.; Fischer, A.; Ploog, K.; Molinari, E.; Baroni, S.; Giannozzi, P.; De Gironcoli, S.
Control of Ge homojunction band offsets via ultrathin Ga–As dipole layers
1991-01-01 Mckinley, J. T.; Hwu, Y.; Koltenbah, B. E. C.; Margaritondo, G.; Baroni, S.; Resta, R.
Tuning band offsets at semiconductor interfaces by intralayer deposition
1991-01-01 Peressi, M.; Baroni, S.; Resta, R.; Baldereschi, A.
Control of Ge homojunction band offsets via ultrathin GaAs dipole layers
1992-01-01 Mckinley, J. T.; Hwu, Y.; Koltenbah, B. E. C.; Margaritondo, G.; Baroni, S.; Resta, R.
Microscopic manipulation of homojunction band lineups
1992-01-01 Marsi, M.; La Rosa, S.; Hwu, Y.; Gozzo, F.; Coluzza, C.; Baldereschi, A.; Margaritondo, G.; Mckinley, J. T.; Baroni, S.; Resta, R.
Phonon softening and high-pressure low-symmetry phases of cesium iodide
1992-01-01 Nardelli, M. B.; Baroni, S; Giannozzi, P.
Towards Very Large-Scale Electronic-Structure Calculations
1992-01-01 Baroni, S; Giannozzi, P.
Effects of disorder on the vibrational properties of sige alloys: Failure of mean-field approximations
1992-01-01 De Gironcoli, S.; Baroni, S.
Vibrational properties of isolated AlAs monolayers embedded in GaAs: a theoretical study of the effects of disorder
1992-01-01 Molinari, E.; Baroni, S.; Giannozzi, P.; de Gironcoli, S.
Structure and Thermodynamics of SiGe Alloys from Computational Alchemy
1992-01-01 Baroni, S.; De Gironcoli, S.; Giannozzi, P.
Microscopic capacitors and neutral interfaces in III-V/IV/III-V semiconductor heterostructures
1992-01-01 Biasiol, G.; Sorba, L.; Bratina, G.; Nicolini, R.; Franciosi, A.; Peressi, M.; Baroni, S.; Resta, R.; Baldereschi, A.
Effects of disorder on the Raman spectra of GaAs/AlAs superlattices
1992-01-01 Molinari, E.; Baroni, S.; Giannozzi, P.; De Gironcoli, S.
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