Sfoglia per Autore
Atomic intermixing in short period GaAs/AlAs superlattices
1992-01-01 Jusserand, B.; Mollot, F.; Planel, R.; Molinari, E.; Baroni, S.
Ab initio lattice dynamics of diamond
1993-01-01 Pavone, P.; Karch, K.; Schütt, O.; Strauch, D.; Windl, W.; Giannozzi, P.; Baroni, S.
Nonlinear piezoelectricity in CdTe
1993-01-01 Dal Corso, A; Resta, R.; Baroni, S.
Ab-initio calculation of phonon dispersions in II-VI semiconductors
1993-01-01 Dal Corso, Andrea; Baroni, Stefano; Resta, R; de Gironcoli, Stefano Maria
Engineering of Semiconductor Heterostructures by Ultrathin Control Layers
1993-01-01 Baldereschi, A.; Resta, R.; Peressi, M.; Baroni, S.; Mäder, K.
Auxiliary-field quantum Monte Carlo calculations for systems with long-range repulsive interactions
1993-01-01 Silvestrelli, P. L.; Baroni, S.; Car, R.
Structural and electronic properties of strained Si/GaAs heterostructures
1993-01-01 Peressi, M.; Colombo, L.; Resta, R.; Baroni, S.; Baldereschi, A.
Ab initio calculation of the band offset at strained GaAs/InAs (001) heterojunctions
1993-01-01 Tit, N.; Peressi, M.; Baroni, S.
Micro-Raman scattering in ultrathin-layer superlattices: Evidence of zone-center anisotropy of optical phonons
1993-01-01 Scamarcio, G.; Haines, M.; Abstreiter, G.; Molinari, E.; Baroni, S.; Fischer, A.; Ploog, K.
Band offsets engineering at semiconductor heterojunctions
1993-01-01 Peressi, M.; Colombo, L.; Baldareschi, A.; Resta, R.; Baroni, S.
Second-order Raman spectra of diamond from ab initio phonon calculations
1993-01-01 Windl, W.; Pavone, P.; Karch, K.; Schütt, O.; Strauch, D.; Giannozzi, P.; Baroni, S.
Third-order density-functional perturbation theory: A practical implementation with applications to anharmonic couplings in Si
1994-01-01 Debernardi, A.; Baroni, S
Structure and phase stability of GaxIn1−xP solid solutions from computational alchemy
1994-01-01 Marzari, N.; De Gironcoli, S.; Baroni, S.
Density-functional theory of the dielectric constant: gradient-corrected calculation for silicon
1994-01-01 Dal Corso, A.; Baroni, S.; Resta, R.
Lack of band-offset transitivity for semiconductor heterojunctions with polar orientation: ZnSe-Ge(001), Ge-GaAs(001), and ZnSe-GaAs(001)
1994-01-01 Bratina, G.; Vanzetti, L.; Sorba, L.; Biasiol, G.; Franciosi, A.; Peressi, M.; Baroni, S.
Dependence of the crystal lattice constant on isotopic composition: Theory and ab initio calculations for C, Si, and Ge
1994-01-01 Pavone, P.; Baroni, S.
Local interface composition and band discontinuities in heterovalent heterostructures
1994-01-01 Nicolini, R.; Vanzetti, L.; Mula, G.; Bratina, G.; Sorba, L.; Franciosi, A.; Peressi, M.; Baroni, S.; Resta, R.; Baldereschi, A.; Angelo, J. E.; Gerberich, W. W.
Bulk and interfacial strain in Si/Ge heterostructures
1994-01-01 Peressi, M.; Baroni, S.
Isotopically resolved Raman spectra of C60
1994-01-01 Guha, S.; Menéndez, J.; Page, J. B.; Adams, G. B.; Spencer, G. S.; Lehman, J. P.; Giannozzi, P.; Baroni, S.
Vibrational and dielectric properties of C60 from density‐functional perturbation theory
1994-01-01 Giannozzi, P.; Baroni, S.
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