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Resta, Raffaele
 Distribuzione geografica
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Continente #
NA - Nord America 2.081
EU - Europa 1.842
AS - Asia 1.028
SA - Sud America 139
Continente sconosciuto - Info sul continente non disponibili 68
AF - Africa 20
OC - Oceania 1
Totale 5.179
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Nazione #
US - Stati Uniti d'America 1.997
RU - Federazione Russa 883
CN - Cina 330
SG - Singapore 291
SE - Svezia 220
IT - Italia 144
TR - Turchia 130
IE - Irlanda 128
DE - Germania 110
UA - Ucraina 106
BR - Brasile 104
HK - Hong Kong 78
GB - Regno Unito 76
VN - Vietnam 73
CA - Canada 63
FI - Finlandia 47
FR - Francia 44
KR - Corea 44
CH - Svizzera 24
BD - Bangladesh 17
NL - Olanda 13
BE - Belgio 12
JP - Giappone 11
AR - Argentina 9
MX - Messico 9
PL - Polonia 9
CO - Colombia 8
ID - Indonesia 7
IN - India 7
MA - Marocco 7
EC - Ecuador 6
UZ - Uzbekistan 6
LB - Libano 5
ZA - Sudafrica 5
AT - Austria 4
IQ - Iraq 4
PH - Filippine 4
VE - Venezuela 4
CL - Cile 3
CR - Costa Rica 3
ES - Italia 3
EU - Europa 3
GT - Guatemala 3
PY - Paraguay 3
RO - Romania 3
DO - Repubblica Dominicana 2
EE - Estonia 2
EG - Egitto 2
GR - Grecia 2
HR - Croazia 2
IR - Iran 2
KZ - Kazakistan 2
LV - Lettonia 2
MY - Malesia 2
PE - Perù 2
PK - Pakistan 2
SA - Arabia Saudita 2
SK - Slovacchia (Repubblica Slovacca) 2
SY - Repubblica araba siriana 2
TN - Tunisia 2
AE - Emirati Arabi Uniti 1
AU - Australia 1
AW - Aruba 1
BA - Bosnia-Erzegovina 1
CI - Costa d'Avorio 1
CY - Cipro 1
CZ - Repubblica Ceca 1
DK - Danimarca 1
ET - Etiopia 1
JM - Giamaica 1
JO - Giordania 1
KE - Kenya 1
KG - Kirghizistan 1
LU - Lussemburgo 1
MN - Mongolia 1
NG - Nigeria 1
NI - Nicaragua 1
NO - Norvegia 1
OM - Oman 1
PS - Palestinian Territory 1
PT - Portogallo 1
QA - Qatar 1
TH - Thailandia 1
TT - Trinidad e Tobago 1
Totale 5.114
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Città #
Moscow 232
San Jose 188
Chandler 169
Ashburn 163
Council Bluffs 137
Jacksonville 136
Santa Clara 133
Singapore 129
Dublin 127
Dallas 117
Ann Arbor 82
New York 80
Hong Kong 75
Wilmington 66
Istanbul 65
Izmir 62
Beijing 57
The Dalles 56
Nanjing 50
Boardman 49
Hefei 44
Saint Petersburg 42
Pisa 38
Toronto 34
Los Angeles 32
Milan 27
Hanoi 25
Nanchang 25
Woodbridge 24
Brooklyn 22
Houston 22
Princeton 22
Seoul 22
Lauterbourg 21
Shanghai 19
Columbus 18
Helsinki 18
Ho Chi Minh City 16
Lausanne 14
Ogden 14
São Paulo 14
Brussels 12
Buffalo 12
Chicago 12
Kunming 12
Orem 12
Scuola 11
Montreal 10
Falls Church 9
Munich 9
Phoenix 9
Warsaw 9
Jiaxing 8
Tokyo 8
Bologna 7
Trieste 7
Turku 7
Washington 7
Da Nang 6
Amsterdam 5
Belo Horizonte 5
Boston 5
Guangzhou 5
Jinan 5
Miano 5
Rio de Janeiro 5
Rome 5
Atlanta 4
Changsha 4
Genoa 4
Hebei 4
Jakarta 4
Johannesburg 4
Lanzhou 4
Mexico City 4
Poplar 4
San Francisco 4
Seattle 4
Secaucus 4
Shenyang 4
Stockholm 4
Tashkent 4
Tianjin 4
Zhengzhou 4
Buenos Aires 3
Den Haag 3
Denver 3
Dhaka 3
Göteborg 3
Hangzhou 3
Ningbo 3
Oklahoma City 3
Paese 3
Pittsburgh 3
Quito 3
Taizhou 3
Asunción 2
Baghdad 2
Bogotá 2
Bratislava 2
Totale 3.005
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Nome #
Ab initio calculation of the macroscopic dielectric constant in silicon 331
Ab initio calculation of the low-frequency Raman cross section in silicon 293
Absolute deformation potentials in semiconductors 266
Density-functional theory of the dielectric constant: gradient-corrected calculation for silicon 264
Band Offsets in Lattice-Matched Heterojunctions: A Model and First-Principles Calculations for GaAs/AlAs 248
Electronic-properties of isocalent anf hetrovalent semiconductor interfaces 247
Piezoelectric properties of III-V semiconductors from first-principles linear-response theory 246
Engineering of Semiconductor Heterostructures by Ultrathin Control Layers 245
Band offsets engineering at semiconductor heterojunctions 243
Nonlinear piezoelectricity in CdTe 237
Dynamical-charge neutrality at a crystal surface 236
Structural and electronic properties of strained Si/GaAs heterostructures 228
Valence-band offsets at strained Si/Ge interfaces 224
Effects of interface morphology on Schottky-barrier heights: A case study on Al/GaAs(001) 219
Electronic structure of InP/Ga0.47In0.53As interfaces 217
Local interface composition and band discontinuities in heterovalent heterostructures 216
Control of Ge homojunction band offsets via ultrathin Ga–As dipole layers 215
Piezoelectricity in III-V and II-VI semiconductors: A systematic ab-initio calculation 213
Microscopic capacitors and neutral interfaces in III-V/IV/III-V semiconductor heterostructures 204
Control of Ge homojunction band offsets via ultrathin GaAs dipole layers 199
Microscopic manipulation of homojunction band lineups 195
Theory of band offsets at semiconductor heterojunctions: An ab-initio linear response approach 193
Totale 5.179
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Categoria #
all - tutte 18.431
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 18.431
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/2022168 0 0 0 22 42 9 13 23 7 8 16 28
2022/2023509 73 67 40 39 24 120 62 32 39 3 6 4
2023/2024254 18 4 6 2 63 87 2 12 43 6 0 11
2024/20251.046 172 56 77 211 122 42 47 71 13 37 83 115
2025/20261.623 42 140 128 117 293 290 259 50 45 120 23 116
2026/2027395 71 119 93 112 0 0 0 0 0 0 0 0
Totale 5.179